Flat panel image sensor and method of manufacturing thereof

A flat panel image sensor includes a thin film transistor (TFT) and diode array, a conformal insulating layer on a top surface of the TFT and diode array, a planarized dielectric layer on a top surface of the conformal insulating layer, a first metalized via in the planarized dielectric layer and th...

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Bibliographische Detailangaben
Hauptverfasser: O'ROURKE SHAWN, RODRIQUEZ ROBERT
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A flat panel image sensor includes a thin film transistor (TFT) and diode array, a conformal insulating layer on a top surface of the TFT and diode array, a planarized dielectric layer on a top surface of the conformal insulating layer, a first metalized via in the planarized dielectric layer and the conformal insulating layer to contact a metalized portion of the TFT and diode array, a second metalized via in the planarized dielectric layer and the conformal insulation layer to contact a diode portion of the TFT and diode array, and a passivation layer over the first and second vias and an upper surface of the planarized dielectric layer.