Stress reduction apparatus

A structure comprises a plurality of connectors formed on a top surface of a first semiconductor die, a second semiconductor die formed on the first semiconductor die and coupled to the first semiconductor die through the plurality of connectors and a first dummy conductive plane formed between an e...

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Bibliographische Detailangaben
Hauptverfasser: CHEN CHEN-SHIEN, LIU HAO-JUIN, HSU YUN, KUO CHENNG, CHUANG YAOUN, CHUANG CHITA
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:A structure comprises a plurality of connectors formed on a top surface of a first semiconductor die, a second semiconductor die formed on the first semiconductor die and coupled to the first semiconductor die through the plurality of connectors and a first dummy conductive plane formed between an edge of the first semiconductor die and the plurality of connectors, wherein an edge of the first dummy conductive plane and a first distance to neutral point (DNP) direction form a first angle, and wherein the first angle is less than or equal to 45 degrees.