Method and system for monitoring crystallization of amorphous silicon thin film, and method of manufacturing thin film transistor by using the method and system

A method and system for monitoring crystallization of an amorphous silicon (a-Si) thin film, and a method of manufacturing a thin film transistor (TFT) by using the method and system are disclosed. The method of monitoring the crystallization of the a-Si thin film includes: irradiating light from a...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	SO BYUNG-SOO, IVAN MAIDANCHUK, LEE WON-PIL, LEE DONG-HYUN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A method and system for monitoring crystallization of an amorphous silicon (a-Si) thin film, and a method of manufacturing a thin film transistor (TFT) by using the method and system are disclosed. The method of monitoring the crystallization of the a-Si thin film includes: irradiating light from a light source onto a monitoring a-Si thin film to anneal the monitoring a-Si thin film; annealing the monitoring a-Si thin film and concurrently measuring a Raman scattering spectrum of light scattered by the monitoring a-Si thin film at set time intervals; and calculating a crystallization characteristic value of the monitoring a-Si thin film based on the Raman scattering spectrum.