Method for postdoping a semiconductor wafer
A method for treating a semiconductor wafer having a basic doping is disclosed. The method includes determining a doping concentration of the basic doping, and adapting the basic doping of the semiconductor wafer by postdoping. The postdoping includes at least one of the following methods: a proton...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A method for treating a semiconductor wafer having a basic doping is disclosed. The method includes determining a doping concentration of the basic doping, and adapting the basic doping of the semiconductor wafer by postdoping. The postdoping includes at least one of the following methods: a proton implantation and a subsequent thermal process for producing hydrogen induced donors, and a neutron irradiation. In this case, at least one of the following parameters is dependent on the determined doping concentration of the basic doping: an implantation dose of the proton implantation, a temperature of the thermal process, and an irradiation dose of the neutron irradiation. |
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