Semiconductor image pickup device

According to one embodiment, a semiconductor image pickup device includes a pixel area and a non-pixel area. The device includes a first photoelectric conversion element formed in the pixel area, a first transistor formed in the pixel area and connected to the first photoelectric conversion element, a second photoelectric conversion element formed in the non-pixel area, a second transistor formed in the non-pixel area and connected to the second photoelectric conversion element, a metal wire formed at least in the non-pixel area, a first cap layer formed on the metal wire to prevent diffusion of metal contained in the metal wire, and a dummy via wire formed in the non-pixel area and penetrating the first cap layer.