Methods for fabricating semiconductor device
The method for fabricating a semiconductor device is provided. A doped semiconductor layer is formed over the substrate. The doped semiconductor layer is patterned to form a plurality of doped semiconductor patterns. An implantation process is performed to implant a dopant into the doped semiconduct...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The method for fabricating a semiconductor device is provided. A doped semiconductor layer is formed over the substrate. The doped semiconductor layer is patterned to form a plurality of doped semiconductor patterns. An implantation process is performed to implant a dopant into the doped semiconductor patterns. A process temperature of the implantation process is no more than about −50° C. The dopants of the implantation process and the doped semiconductor patterns have the same conductivity type. |
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