Metallization layers configured for reduced parasitic capacitance

Structures and methods to minimize parasitic capacitance in a circuit structure are provided. The structure may include a substrate supporting one or more circuits and one or more metallization layers above the substrate. The metallization layer includes a conductive pattern defined by an array of conductive fill elements, where the conductive fill elements of the array are discrete, electrically isolated elements sized to satisfy, at least in part, a pre-defined minimum area-occupation ratio for a chemical-mechanical polishing of the metallization layer, and to minimize parasitic capacitance within the metallization layer, as well as minimize parasitic capacitance between the metallization layer and the circuit, and if multiple metallization layers are present, between the layers.