Process for cleaning, drying and hydrophilizing a semiconductor wafer

Semiconductor wafers are cleaned, dried, and hydrophilized the following steps in the order stated: a) treating the semiconductor wafer with a liquid aqueous solution containing hydrogen fluoride, the semiconductor wafer rotating about its center axis at least occasionally, and b) drying the semicon...

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Bibliographische Detailangaben
Hauptverfasser:	SCHWAB GUENTER, BUSCHHARDT THOMAS, ZAPILKO CLEMENS, FEIJOO DIEGO
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	Semiconductor wafers are cleaned, dried, and hydrophilized the following steps in the order stated: a) treating the semiconductor wafer with a liquid aqueous solution containing hydrogen fluoride, the semiconductor wafer rotating about its center axis at least occasionally, and b) drying the semiconductor wafer by rotation of the semiconductor wafer about its center axis at a rotational speed of 1000 to 5000 revolutions per minute in an ozone-containing atmosphere, the liquid aqueous solution containing hydrogen fluoride flowing away from the semiconductor wafer on account of the centrifugal force generated by the rotation, and the surface of the semiconductor wafer being hydrophilized by ozone.