Method for fabricating capacitor

A method for fabricating a capacitor includes: forming a storage node contact plug over a substrate; forming an insulation layer having an opening exposing a surface of the storage node contact plug over the storage contact plug; forming a conductive layer for a storage node over the insulation laye...

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Bibliographische Detailangaben
Hauptverfasser: PARK KI-SEON, YEOM SEUNG-JIN, KIL DEOK-SIN, KIM JIN-HYOCK, ROH JAE-SUNG, SONG HAN-SANG
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A method for fabricating a capacitor includes: forming a storage node contact plug over a substrate; forming an insulation layer having an opening exposing a surface of the storage node contact plug over the storage contact plug; forming a conductive layer for a storage node over the insulation layer and the exposed surface of the storage node contact plug through two steps performed at different temperatures; performing an isolation process to isolate parts of the conductive layer; and sequentially forming a dielectric layer and a plate electrode over the isolated conductive layer.