Method for preparing and use of Sb2Te3 nanocrystals in thermoelectric materials

Disclosed are a thermoelectric material and a method of forming a thermoelectric material having an optimal stoichiometry, the method including obtaining a first precursor material, wherein the first precursor material is an antimony precursor, and obtaining a second precursor material, wherein the...

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Bibliographische Detailangaben
Hauptverfasser: PENG ADAM Z, BALLINGER CLINTON T, PERERA SUSANTHRI, SOCHA DAVE
Format: Patent
Sprache:eng
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Zusammenfassung:Disclosed are a thermoelectric material and a method of forming a thermoelectric material having an optimal stoichiometry, the method including obtaining a first precursor material, wherein the first precursor material is an antimony precursor, and obtaining a second precursor material, wherein the second precursor is chosen from the group consisting of a tellurium precursor and a selenium precursor. The method further includes combining the precursor materials, heating the combination of precursor materials, and isolating a plurality of semiconductor nanocrystals from the heated precursor materials.