Imaging devices with solid-state radiation detector with improved sensitivity

A radiation detector includes a semiconductor substrate having opposing front and rear surfaces, a cathode electrode located on the front surface of the semiconductor substrate configured so as to receive radiation, and a plurality of anode electrodes formed on the rear surface of said semiconductor...

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Bibliographische Detailangaben
Hauptverfasser:	MARTHANDAM PRAMODHA, LU PINGHE, AWADALLA SALAH, CHEN HENRY
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASUREMENT OF NUCLEAR OR X-RADIATION MEASURING PHYSICS REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE TESTING
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Beschreibung
Zusammenfassung:	A radiation detector includes a semiconductor substrate having opposing front and rear surfaces, a cathode electrode located on the front surface of the semiconductor substrate configured so as to receive radiation, and a plurality of anode electrodes formed on the rear surface of said semiconductor substrate. A work function of the cathode electrode material contacting the front surface of the semiconductor substrate is lower than a work function of the anode electrode material contacting the rear surface of the semiconductor substrate.