Memory with discrete storage elements

A method of making a non-volatile memory cell includes forming a plurality of discrete storage elements. A tensile dielectric layer is formed among the discrete storage elements and provides lateral tensile stress to the discrete storage elements. A gate is formed over the discrete storage elements.

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	WINSTEAD BRIAN A, LOIKO KONSTANTIN V, SHROFF MEHUL D
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY PERFORMING OPERATIONS PHYSICS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES STATIC STORES TRANSPORTING
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A method of making a non-volatile memory cell includes forming a plurality of discrete storage elements. A tensile dielectric layer is formed among the discrete storage elements and provides lateral tensile stress to the discrete storage elements. A gate is formed over the discrete storage elements.