Semiconductor device having modified profile metal gate

In one embodiment, a method includes providing a semiconductor substrate having a trench disposed thereon and forming a plurality of layers in the trench. The plurality of layers formed in the trench is etched thereby providing at least one etched layer having a top surface that lies below a top sur...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WANN CLEMENT HSINGJEN, CHEN ZHAONG, HUANG YU-LIEN, TSAI MING-HUAN, LIU CHI-WEN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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