Semiconductor device having modified profile metal gate

Semiconductor device having modified profile metal gate

In one embodiment, a method includes providing a semiconductor substrate having a trench disposed thereon and forming a plurality of layers in the trench. The plurality of layers formed in the trench is etched thereby providing at least one etched layer having a top surface that lies below a top sur...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: WANN CLEMENT HSINGJEN, CHEN ZHAONG, HUANG YU-LIEN, TSAI MING-HUAN, LIU CHI-WEN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:In one embodiment, a method includes providing a semiconductor substrate having a trench disposed thereon and forming a plurality of layers in the trench. The plurality of layers formed in the trench is etched thereby providing at least one etched layer having a top surface that lies below a top surface of the trench. In a further embodiment, this may provide for a substantially v-shaped opening or entry to the trench for the formation of further layers.