Apparatus for treating thin film and method of treating thin film

An apparatus and method for treating a thin film on a substrate is presented. The substrate is loaded on a fixed stage adapted to receive the substrate. An energy source is aligned through a space in a gas shield so as to face a thin film on the substrate to be repaired after the substrate is loaded...

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Bibliographische Detailangaben
Hauptverfasser:	PARK SANG-HYUCK, LEE JONGUL
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	An apparatus and method for treating a thin film on a substrate is presented. The substrate is loaded on a fixed stage adapted to receive the substrate. An energy source is aligned through a space in a gas shield so as to face a thin film on the substrate to be repaired after the substrate is loaded. A protective insulating layer is removed by radiation from the energy source, a reaction gas is supplied to the space, and an open and/or short circuit in the thin film is repaired. The energy source and/or gas shield is moved during the repair, rather than the stage. If the energy source and gas shield are both moved, they are moved in opposite directions, either independently or dependent on each other, by first and second operating units, respectively.