Stationary actively-cooled shadow ring for heat dissipation in plasma chamber

Methods of and apparatuses for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a plasma processing apparatus includes a processing chamber having a chamber wall. The plasma processing apparatus also includes a plasma source in an upper portion of the processing chamber. A sample support is included for situating a sample below the plasma source. An actively-cooled shadow ring having a cooling channel therein for cooling fluid transport is fixedly attached to the chamber wall of the processing chamber, between the plasma source and the sample support.