Three dimensional semiconductor memory device and method of manufacturing the same

Three dimensional semiconductor memory device and method of manufacturing the same

Provided is a three dimensional semiconductor device. The device may include mold layers vertically and sequentially stacked, a conductive pattern between the stacked mold layers, a plugging pattern vertically penetrating the stacked mold layers, an intermediate pattern between the conductive patter...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KONG YOOCHUL, HWANG KIHYUN, YOO DONGCHUL, PARK CHANJIN, YANG JUNKYU, MIN GYUNGJIN, CHOI HANMEI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Provided is a three dimensional semiconductor device. The device may include mold layers vertically and sequentially stacked, a conductive pattern between the stacked mold layers, a plugging pattern vertically penetrating the stacked mold layers, an intermediate pattern between the conductive pattern and the plugging pattern, and protective layer patterns between the mold layers and the plugging pattern, wherein the protective layer patterns are separated by the intermediate pattern.