Methods for fabricating integrated passive devices on glass substrates

A method includes forming a plurality of dielectric layers over a semiconductor substrate; and forming integrated passive devices in the plurality of dielectric layers. The semiconductor substrate is then removed from the plurality of dielectric layers. A dielectric substrate is bonded onto the plur...

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Bibliographische Detailangaben
Hauptverfasser: MAO MING-RAY, CHEN WENAO, TSAI KUANI, YANG SHIH-HSIEN
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A method includes forming a plurality of dielectric layers over a semiconductor substrate; and forming integrated passive devices in the plurality of dielectric layers. The semiconductor substrate is then removed from the plurality of dielectric layers. A dielectric substrate is bonded onto the plurality of dielectric layers.