Sidewall image transfer for heavy metal patterning in integrated circuits

A method for fabricating a plurality of conductive lines in an integrated circuit includes providing a layer of conductive metal in a multi-layer structure fabricated upon a wafer, forming a spacer in a layer of the multi-layer structure residing above the layer of conductive metal, wherein the spac...

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Bibliographische Detailangaben
Hauptverfasser: GUILLORN MICHAEL A, HOINKIS MARK D, TO BANG N, BRINK MARKUS, JOSEPH ERIC A, MIYAZOE HIROYUKI
Format: Patent
Sprache:eng
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Zusammenfassung:A method for fabricating a plurality of conductive lines in an integrated circuit includes providing a layer of conductive metal in a multi-layer structure fabricated upon a wafer, forming a spacer in a layer of the multi-layer structure residing above the layer of conductive metal, wherein the spacer is formed from a metal-containing atomic layer deposition material, and transferring a pattern from the spacer to the layer of conductive metal using a sidewall image transfer technique, wherein the transferring results in a formation of the plurality of conductive lines in the layer of conductive material.