Stacked redistribution layers on die

Stacked redistribution layers on die

Some implementations provide a semiconductor device (e.g., die) that includes a substrate, several metal layers and dielectric layers coupled to the substrate, a pad coupled to one of the plurality of metal layers, a first metal redistribution layer coupled to the pad, and a second metal redistribut...

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Bibliographische Detailangaben
Hauptverfasser: CAFFEY KEVIN PATRICK, HAU-RIEGE CHRISTINE SUNG-AN, ALVARADO REYNANTE TAMUNAN, GASTELUM DAMION BRYAN, BEZUK STEVE JOSEPH, YAU YOU-WEN, KESER LIZABETH ANN, MCALLISTER GENE HYDE
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Some implementations provide a semiconductor device (e.g., die) that includes a substrate, several metal layers and dielectric layers coupled to the substrate, a pad coupled to one of the plurality of metal layers, a first metal redistribution layer coupled to the pad, and a second metal redistribution layer coupled to the first metal redistribution layer. The second metal redistribution layer includes a cobalt tungsten phosphorous material. In some implementations, the first metal redistribution layer is a copper layer. In some implementations, the semiconductor device further includes a first underbump metallization (UBM) layer and a second underbump metallization (UBM) layer.