Methods to improve the performance of compound semiconductor devices and field effect transistors

Three methods will be described which may be used to improve the performance of compound semiconductor devices and Field Effect Transistors. In the first method, implementation of more than one sheet of 2DEG or high-density electrons in compound semiconductor devices will be described which may be used to improve the performance of compound semiconductor diodes, resistors and transistors. In the second method, implementation of at least one discontinuity in sheet or sheets of 2DEG or high-density electrons will be discussed which can be used to improve the performance of compound semiconductor diodes, resistors and transistors. In the third method, a way to form an electrical connection between an electrode and a sheet of 2DEG or high density electrons will be presented which may be implemented in compound semiconductor devices to reduce the contract resistance between an electrode and a sheet of 2DEG or high-density electrons.