Semiconductor device comprising a fuse structure and a method for manufacturing such semiconductor device

Semiconductor device comprising a fuse structure and a method for manufacturing such semiconductor device

A semiconductor device comprises a semiconductor substrate, an anorganic isolation layer on the semiconductor substrate and a metallization layer on the anorganic isolation layer. The metallization layer comprises a fuse structure. At least in an area of the fuse structure the metallization layer an...

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Bibliographische Detailangaben
Hauptverfasser: BETTINESCHI GABRIELE, SCHRENK MICHAEL, WERTHMANN HUBERT, SEIDEL UWE, WALTER WOLFGANG
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device comprises a semiconductor substrate, an anorganic isolation layer on the semiconductor substrate and a metallization layer on the anorganic isolation layer. The metallization layer comprises a fuse structure. At least in an area of the fuse structure the metallization layer and the anorganic isolation layer have a common interface.