Mechanism for facilitating fine-grained self-refresh control for dynamic memory devices

A mechanism for facilitating improved refresh schemes for memory devices is described. In one embodiment, an apparatus includes a memory device having refresh logic and memory cells, the memory cells including data cells and supplemental cells, the supplemental cells to be observed. The supplemental cells emulate a decay characteristic of the data cells performing regular refresh operations according to an existing refresh policy. The apparatus may further include the refresh logic to receive, from the supplemental cells, observation data relating to decaying of the supplemental cells, and correlate the observation data to data cell performance. The refresh logic to generate a policy recommendation based on the observation data collected by the supplemental cells.