Surrounding gate transistor (SGT) structure

The semiconductor device according to the present invention is an nMOS SGT and is composed of a first n+ type silicon layer, a first gate electrode containing metal and a second n+ type silicon layer arranged on the surface of a first columnar silicon layer positioned vertically on a first planar si...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LI YISUO, ARAI SHINTARO, SINGH NAVAB, NAKAMURA HIROKI, JIANG YU, SHEN NANSHENG, KUDO TOMOHIKO, CHEN ZHIXIAN, BLIZNETSOV VLADIMIR, BUDDHARAJU KAVITHA DEVI, LI XIANG, MASUOKA FUJIO, CHUI KING-JIEN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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