Method of adjusting a threshold voltage of a transistor in the forming of a semiconductor device including the transistor
A method of forming a semiconductor device includes forming a first transistor and a second transistor on a substrate, monitoring processes of forming the first and second transistors to find an error and performing an additional ion implantation process to form a low-concentration dopant region or...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A method of forming a semiconductor device includes forming a first transistor and a second transistor on a substrate, monitoring processes of forming the first and second transistors to find an error and performing an additional ion implantation process to form a low-concentration dopant region or a halo region on the first transistor or the second transistor corresponding to a found error. |
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