Full metal gate replacement process for NAND flash memory

Full metal gate replacement process for NAND flash memory

A NAND flash memory chip is made by forming sacrificial control gate structures and sacrificial select structures, and subsequently replacing these sacrificial structures with metal. Filler structures are formed between sacrificial control gate structures and are subsequently removed to form air gap...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SEL JONGSUN, PHAM TUAN, GUNJI-YONEOKA MARIKA, TOKUNAGA KAZUYA
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A NAND flash memory chip is made by forming sacrificial control gate structures and sacrificial select structures, and subsequently replacing these sacrificial structures with metal. Filler structures are formed between sacrificial control gate structures and are subsequently removed to form air gaps between neighboring control gate lines and between floating gates.