Bipolar electrostatic chuck for dicing tape thermal management during plasma dicing
Methods of and apparatuses for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a plasma etch chamber includes a plasma source disposed in an upper region of the plasma etch chamber. A bipolar electrostatic chuck is disposed below the p...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | Methods of and apparatuses for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a plasma etch chamber includes a plasma source disposed in an upper region of the plasma etch chamber. A bipolar electrostatic chuck is disposed below the plasma source. The bipolar electrostatic chuck is sized to support a substrate carrier having a tape and tape frame. The bipolar electrostatic chuck is configured to control a backside temperature of the substrate carrier prior to and during plasma processing. |
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