Reduced stress high voltage word line driver

Exemplary embodiments of the present invention disclose a method and system for asserting a voltage transition from a low voltage to a high voltage with a voltage difference between the low and high voltages on a word line with a word line driver logic that is composed of thin-oxide MOS transistors, wherein the thin-oxide MOS transistors experience less than the voltage difference on the word line between any two of a source, a drain, and a gate. In a step, charging the word line from the low voltage to an intermediate voltage level. In another step, charging the word line to the high voltage from the intermediate voltage level.