Copper residue chamber clean

Methods of removing copper residue from interior surfaces of an etch process chamber are described. A plasma treatment using halogen-containing precursors transforms the copper residue into halogen-copper complexes. Plasma-excited inert gases are used to desorb the halogen-copper complexes. In this...

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Bibliographische Detailangaben
Hauptverfasser: JOSEPH ERIC, HOINKIS MARK, YAN CHUN, MIYAZOE HIROYUKI
Format: Patent
Sprache:eng
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Zusammenfassung:Methods of removing copper residue from interior surfaces of an etch process chamber are described. A plasma treatment using halogen-containing precursors transforms the copper residue into halogen-copper complexes. Plasma-excited inert gases are used to desorb the halogen-copper complexes. In this way, the copper residue is removed from the interior surfaces of the etch process chamber.