Semiconductor device

A semiconductor device according to embodiments includes a semiconductor substrate, first semiconductor layers of a first conductive type provided on a surface of the semiconductor substrate, extend in a first direction, and are surrounded by a gate layer, second semiconductor layers of the first co...

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Bibliographische Detailangaben
1. Verfasser: KAMATA SHUJI
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A semiconductor device according to embodiments includes a semiconductor substrate, first semiconductor layers of a first conductive type provided on a surface of the semiconductor substrate, extend in a first direction, and are surrounded by a gate layer, second semiconductor layers of the first conductive type provided between the first semiconductor layers, a third semiconductor layer of the first conductive type provided at ends of the first direction of the first semiconductor layers and is surrounded by the gate layer, a fourth semiconductor layer of a second conductive type provided in the semiconductor substrate, a sixth semiconductor layer of the first conductive type provided on a back surface of the semiconductor substrate, a seventh semiconductor layer of the second conductive type provided between the sixth semiconductor layer and the first semiconductor layers, an emitter electrode, and a collector electrode.