Direct relative measurement of memory durability

Disclosed is a memory including a plurality of resistive change memory cells, including at least a first group and a second group of the memory cells and a comparison circuit configured to conduct a direct relative comparison of a remaining endurance of the first group of memory cells to a remaining...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: LINSTADT ERIC, TRINGALI J. JAMES, HAUKNESS BRENT STEVEN
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator LINSTADT ERIC
TRINGALI J. JAMES
HAUKNESS BRENT STEVEN
description Disclosed is a memory including a plurality of resistive change memory cells, including at least a first group and a second group of the memory cells and a comparison circuit configured to conduct a direct relative comparison of a remaining endurance of the first group of memory cells to a remaining endurance of the second group of memory cells.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US9111612B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US9111612B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US9111612B23</originalsourceid><addsrcrecordid>eNrjZDBwySxKTS5RKErNSSzJLEtVyE1NLC4tSs1NzStRyE8DcnPziyoVUkqLEpMyczJLKnkYWNMSc4pTeaE0N4OCm2uIs4duakF-fGpxQWJyal5qSXxosKWhoaGZoZGTkTERSgA9lit3</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Direct relative measurement of memory durability</title><source>esp@cenet</source><creator>LINSTADT ERIC ; TRINGALI J. JAMES ; HAUKNESS BRENT STEVEN</creator><creatorcontrib>LINSTADT ERIC ; TRINGALI J. JAMES ; HAUKNESS BRENT STEVEN</creatorcontrib><description>Disclosed is a memory including a plurality of resistive change memory cells, including at least a first group and a second group of the memory cells and a comparison circuit configured to conduct a direct relative comparison of a remaining endurance of the first group of memory cells to a remaining endurance of the second group of memory cells.</description><language>eng</language><subject>CALCULATING ; COMPUTING ; COUNTING ; ELECTRIC DIGITAL DATA PROCESSING ; INFORMATION STORAGE ; MEASURING ; MEASURING ELECTRIC VARIABLES ; MEASURING MAGNETIC VARIABLES ; PHYSICS ; STATIC STORES ; TESTING</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150818&amp;DB=EPODOC&amp;CC=US&amp;NR=9111612B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150818&amp;DB=EPODOC&amp;CC=US&amp;NR=9111612B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LINSTADT ERIC</creatorcontrib><creatorcontrib>TRINGALI J. JAMES</creatorcontrib><creatorcontrib>HAUKNESS BRENT STEVEN</creatorcontrib><title>Direct relative measurement of memory durability</title><description>Disclosed is a memory including a plurality of resistive change memory cells, including at least a first group and a second group of the memory cells and a comparison circuit configured to conduct a direct relative comparison of a remaining endurance of the first group of memory cells to a remaining endurance of the second group of memory cells.</description><subject>CALCULATING</subject><subject>COMPUTING</subject><subject>COUNTING</subject><subject>ELECTRIC DIGITAL DATA PROCESSING</subject><subject>INFORMATION STORAGE</subject><subject>MEASURING</subject><subject>MEASURING ELECTRIC VARIABLES</subject><subject>MEASURING MAGNETIC VARIABLES</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDBwySxKTS5RKErNSSzJLEtVyE1NLC4tSs1NzStRyE8DcnPziyoVUkqLEpMyczJLKnkYWNMSc4pTeaE0N4OCm2uIs4duakF-fGpxQWJyal5qSXxosKWhoaGZoZGTkTERSgA9lit3</recordid><startdate>20150818</startdate><enddate>20150818</enddate><creator>LINSTADT ERIC</creator><creator>TRINGALI J. JAMES</creator><creator>HAUKNESS BRENT STEVEN</creator><scope>EVB</scope></search><sort><creationdate>20150818</creationdate><title>Direct relative measurement of memory durability</title><author>LINSTADT ERIC ; TRINGALI J. JAMES ; HAUKNESS BRENT STEVEN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US9111612B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2015</creationdate><topic>CALCULATING</topic><topic>COMPUTING</topic><topic>COUNTING</topic><topic>ELECTRIC DIGITAL DATA PROCESSING</topic><topic>INFORMATION STORAGE</topic><topic>MEASURING</topic><topic>MEASURING ELECTRIC VARIABLES</topic><topic>MEASURING MAGNETIC VARIABLES</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>LINSTADT ERIC</creatorcontrib><creatorcontrib>TRINGALI J. JAMES</creatorcontrib><creatorcontrib>HAUKNESS BRENT STEVEN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LINSTADT ERIC</au><au>TRINGALI J. JAMES</au><au>HAUKNESS BRENT STEVEN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Direct relative measurement of memory durability</title><date>2015-08-18</date><risdate>2015</risdate><abstract>Disclosed is a memory including a plurality of resistive change memory cells, including at least a first group and a second group of the memory cells and a comparison circuit configured to conduct a direct relative comparison of a remaining endurance of the first group of memory cells to a remaining endurance of the second group of memory cells.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US9111612B2
source esp@cenet
subjects CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
INFORMATION STORAGE
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
STATIC STORES
TESTING
title Direct relative measurement of memory durability
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T02%3A54%3A48IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=LINSTADT%20ERIC&rft.date=2015-08-18&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS9111612B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true