Direct relative measurement of memory durability

Disclosed is a memory including a plurality of resistive change memory cells, including at least a first group and a second group of the memory cells and a comparison circuit configured to conduct a direct relative comparison of a remaining endurance of the first group of memory cells to a remaining...

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Bibliographische Detailangaben
Hauptverfasser: LINSTADT ERIC, TRINGALI J. JAMES, HAUKNESS BRENT STEVEN
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:Disclosed is a memory including a plurality of resistive change memory cells, including at least a first group and a second group of the memory cells and a comparison circuit configured to conduct a direct relative comparison of a remaining endurance of the first group of memory cells to a remaining endurance of the second group of memory cells.