Method and structure to reduce FET threshold voltage shift due to oxygen diffusion

Method and structure to reduce FET threshold voltage shift due to oxygen diffusion

Oxygen scavenging material embedded in an isolation structure provides improved protection of high dielectric constant (Hi-K) materials from oxygen contamination while avoiding alteration of work function and switching threshold shift in transistors including such Hi-K materials.

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Bibliographische Detailangaben
Hauptverfasser: BAIOCCO CHRISTOPHER VINCENT, NAIR DELEEP R, CHUDZIK MICHAEL P, SHAH JAY M
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:Oxygen scavenging material embedded in an isolation structure provides improved protection of high dielectric constant (Hi-K) materials from oxygen contamination while avoiding alteration of work function and switching threshold shift in transistors including such Hi-K materials.