Wire bondable surface for microelectronic devices

Wire bondable surface for microelectronic devices

The present invention concerns thin diffusion barriers in metal and metal alloy layer sequences of contact area/barrier layer/first bonding layer type for metal wire bonding applications. The diffusion barrier is selected from Co-M-P. Co-M-B and Co-M-B-P alloys wherein M is selected from Mn, Zr, Re,...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: SUCHENTRUNK CHRISTOF, GAIDA JOSEF, UHLIG ALBRECHT
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The present invention concerns thin diffusion barriers in metal and metal alloy layer sequences of contact area/barrier layer/first bonding layer type for metal wire bonding applications. The diffusion barrier is selected from Co-M-P. Co-M-B and Co-M-B-P alloys wherein M is selected from Mn, Zr, Re, Mo, Ta and W having a thickness in the range 0.03 to 0.3 μm. The first bonding layer is selected from palladium and palladium alloys.