Structure and method for making crack stop for 3D integrated circuits

The present invention relates to bonded semiconductor integrated circuits, more specifically to a structure to protect against crack propagation into any layer of such integrated circuits. Embodiments of the present invention may include a first semiconductor substrate having a first layer bonded to...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: MELVILLE IAN D, SHAW THOMAS M, LANDERS WILLIAM F, ZHU HUILONG, GRIESEMER JOHN A, FAROOQ MUKTA G
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The present invention relates to bonded semiconductor integrated circuits, more specifically to a structure to protect against crack propagation into any layer of such integrated circuits. Embodiments of the present invention may include a first semiconductor substrate having a first layer bonded to second layer of a substantially thinner second semiconductor substrate by a bonding layer. The first layer may contain a crack stop. The crack stop may be in contact with a circumferential wall, made up of posts, that extends through the bonding layer, the second layer, and the second substrate.