Method of manufacturing a super-junction semiconductor device

A method of manufacturing a super-junction semiconductor device is disclosed that allows forming a high concentration layer with high precision and improves the trade-off relationship between the Eoff and the dV/dt. The method comprises a step of forming a parallel pn layer and a step of forming a p...

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Hauptverfasser:	FUJIHIRA TATSUHIKO, YAMADA MICHIYA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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