Method of manufacturing a super-junction semiconductor device
A method of manufacturing a super-junction semiconductor device is disclosed that allows forming a high concentration layer with high precision and improves the trade-off relationship between the Eoff and the dV/dt. The method comprises a step of forming a parallel pn layer and a step of forming a p...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A method of manufacturing a super-junction semiconductor device is disclosed that allows forming a high concentration layer with high precision and improves the trade-off relationship between the Eoff and the dV/dt. The method comprises a step of forming a parallel pn layer and a step of forming a proton irradiated layer in the upper region of the pn layer. Then, heat treatment is conducted on the proton irradiated layer for transforming the protons into donors to form a high concentration n type semiconductor layer. |
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