Metal-insulator-metal capacitor structures
Capacitor structures capable of providing both low-voltage capacitors and high-voltage capacitors are described herein. In one embodiment, a capacitor structure comprises a low-voltage capacitor and a high-voltage capacitor. The low-voltage capacitor comprises a first electrode formed from a first m...
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| creator | KIM ROBERT WON CHOL SRINIVAS VAISHNAV JAKUSHOKAS RENATAS |
| description | Capacitor structures capable of providing both low-voltage capacitors and high-voltage capacitors are described herein. In one embodiment, a capacitor structure comprises a low-voltage capacitor and a high-voltage capacitor. The low-voltage capacitor comprises a first electrode formed from a first metal layer, a second electrode formed from a second metal layer, a third electrode formed from a third metal layer, a first dielectric layer between the first and second electrodes, and a second dielectric layer between the second and third electrodes. The high-voltage capacitor comprises a fourth electrode formed from the first metal layer, a fifth electrode formed from the third metal layer, and a third dielectric layer between the fourth and fifth electrodes, wherein the third dielectric layer is thicker than either the first dielectric layer or the second dielectric layer. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US9041148B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US9041148B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US9041148B23</originalsourceid><addsrcrecordid>eNrjZNDyTS1JzNHNzCsuzUksyS_SzQXxFZITCxKTM4F8heKSotLkktKi1GIeBta0xJziVF4ozc2g4OYa4uyhm1qQH59aDNSQmpdaEh8abGlgYmhoYuFkZEyEEgAm9il0</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Metal-insulator-metal capacitor structures</title><source>esp@cenet</source><creator>KIM ROBERT WON CHOL ; SRINIVAS VAISHNAV ; JAKUSHOKAS RENATAS</creator><creatorcontrib>KIM ROBERT WON CHOL ; SRINIVAS VAISHNAV ; JAKUSHOKAS RENATAS</creatorcontrib><description>Capacitor structures capable of providing both low-voltage capacitors and high-voltage capacitors are described herein. In one embodiment, a capacitor structure comprises a low-voltage capacitor and a high-voltage capacitor. The low-voltage capacitor comprises a first electrode formed from a first metal layer, a second electrode formed from a second metal layer, a third electrode formed from a third metal layer, a first dielectric layer between the first and second electrodes, and a second dielectric layer between the second and third electrodes. The high-voltage capacitor comprises a fourth electrode formed from the first metal layer, a fifth electrode formed from the third metal layer, and a third dielectric layer between the fourth and fifth electrodes, wherein the third dielectric layer is thicker than either the first dielectric layer or the second dielectric layer.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CAPACITORS ; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150526&DB=EPODOC&CC=US&NR=9041148B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150526&DB=EPODOC&CC=US&NR=9041148B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KIM ROBERT WON CHOL</creatorcontrib><creatorcontrib>SRINIVAS VAISHNAV</creatorcontrib><creatorcontrib>JAKUSHOKAS RENATAS</creatorcontrib><title>Metal-insulator-metal capacitor structures</title><description>Capacitor structures capable of providing both low-voltage capacitors and high-voltage capacitors are described herein. In one embodiment, a capacitor structure comprises a low-voltage capacitor and a high-voltage capacitor. The low-voltage capacitor comprises a first electrode formed from a first metal layer, a second electrode formed from a second metal layer, a third electrode formed from a third metal layer, a first dielectric layer between the first and second electrodes, and a second dielectric layer between the second and third electrodes. The high-voltage capacitor comprises a fourth electrode formed from the first metal layer, a fifth electrode formed from the third metal layer, and a third dielectric layer between the fourth and fifth electrodes, wherein the third dielectric layer is thicker than either the first dielectric layer or the second dielectric layer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CAPACITORS</subject><subject>CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNDyTS1JzNHNzCsuzUksyS_SzQXxFZITCxKTM4F8heKSotLkktKi1GIeBta0xJziVF4ozc2g4OYa4uyhm1qQH59aDNSQmpdaEh8abGlgYmhoYuFkZEyEEgAm9il0</recordid><startdate>20150526</startdate><enddate>20150526</enddate><creator>KIM ROBERT WON CHOL</creator><creator>SRINIVAS VAISHNAV</creator><creator>JAKUSHOKAS RENATAS</creator><scope>EVB</scope></search><sort><creationdate>20150526</creationdate><title>Metal-insulator-metal capacitor structures</title><author>KIM ROBERT WON CHOL ; SRINIVAS VAISHNAV ; JAKUSHOKAS RENATAS</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US9041148B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2015</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CAPACITORS</topic><topic>CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KIM ROBERT WON CHOL</creatorcontrib><creatorcontrib>SRINIVAS VAISHNAV</creatorcontrib><creatorcontrib>JAKUSHOKAS RENATAS</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KIM ROBERT WON CHOL</au><au>SRINIVAS VAISHNAV</au><au>JAKUSHOKAS RENATAS</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Metal-insulator-metal capacitor structures</title><date>2015-05-26</date><risdate>2015</risdate><abstract>Capacitor structures capable of providing both low-voltage capacitors and high-voltage capacitors are described herein. In one embodiment, a capacitor structure comprises a low-voltage capacitor and a high-voltage capacitor. The low-voltage capacitor comprises a first electrode formed from a first metal layer, a second electrode formed from a second metal layer, a third electrode formed from a third metal layer, a first dielectric layer between the first and second electrodes, and a second dielectric layer between the second and third electrodes. The high-voltage capacitor comprises a fourth electrode formed from the first metal layer, a fifth electrode formed from the third metal layer, and a third dielectric layer between the fourth and fifth electrodes, wherein the third dielectric layer is thicker than either the first dielectric layer or the second dielectric layer.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CAPACITORS CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Metal-insulator-metal capacitor structures |
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