Metal-insulator-metal capacitor structures

Capacitor structures capable of providing both low-voltage capacitors and high-voltage capacitors are described herein. In one embodiment, a capacitor structure comprises a low-voltage capacitor and a high-voltage capacitor. The low-voltage capacitor comprises a first electrode formed from a first m...

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Bibliographische Detailangaben
Hauptverfasser: KIM ROBERT WON CHOL, SRINIVAS VAISHNAV, JAKUSHOKAS RENATAS
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:Capacitor structures capable of providing both low-voltage capacitors and high-voltage capacitors are described herein. In one embodiment, a capacitor structure comprises a low-voltage capacitor and a high-voltage capacitor. The low-voltage capacitor comprises a first electrode formed from a first metal layer, a second electrode formed from a second metal layer, a third electrode formed from a third metal layer, a first dielectric layer between the first and second electrodes, and a second dielectric layer between the second and third electrodes. The high-voltage capacitor comprises a fourth electrode formed from the first metal layer, a fifth electrode formed from the third metal layer, and a third dielectric layer between the fourth and fifth electrodes, wherein the third dielectric layer is thicker than either the first dielectric layer or the second dielectric layer.