Semiconductor device and manufacturing method of the semiconductor device
A semiconductor device includes a substrate, a multilayer wiring layer formed over the substrate, an MTJ (Magnetic Tunnel Junction) element formed in an insulating layer located lower than an uppermost wiring layer in the multilayer wiring layer, a wiring formed in a wiring layer immediately above t...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A semiconductor device includes a substrate, a multilayer wiring layer formed over the substrate, an MTJ (Magnetic Tunnel Junction) element formed in an insulating layer located lower than an uppermost wiring layer in the multilayer wiring layer, a wiring formed in a wiring layer immediately above the MTJ element and coupled to the MTJ element, and a shield conductor region provided in the wiring or a wiring layer immediately above the wiring, and covering an entirety of the MTJ element in a plan view. |
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