Superlattice phase change memory including Sb2Te3 layers containing Zr

Superlattice phase change memory including Sb2Te3 layers containing Zr

A superlattice phase change memory capable of increasing a resistance in a low resistance state is provided. The phase change memory includes a first electrode, a second electrode provided on the first electrode, and a phase change memory layer having a superlattice structure between the first elect...

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Hauptverfasser: KINOSHITA MASAHARU, OYANAGI TAKASUMI, TAKAURA NORIKATSU, AKITA KENICHI, TAI MITSUHARU, KITAMURA MASAHITO, MORIKAWA TAKAHIRO
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator KINOSHITA MASAHARU
OYANAGI TAKASUMI
TAKAURA NORIKATSU
AKITA KENICHI
TAI MITSUHARU
KITAMURA MASAHITO
MORIKAWA TAKAHIRO
description A superlattice phase change memory capable of increasing a resistance in a low resistance state is provided. The phase change memory includes a first electrode, a second electrode provided on the first electrode, and a phase change memory layer having a superlattice structure between the first electrode and the second electrode, the superlattice structure including to repeatedly formed layers of Sb2Te3 and GeTe. The phase change memory layer having the superlattice structure includes a Sb2Te3 layer containing Zr in contact with the first electrode.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Superlattice phase change memory including Sb2Te3 layers containing Zr
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