Superlattice phase change memory including Sb2Te3 layers containing Zr

Superlattice phase change memory including Sb2Te3 layers containing Zr

A superlattice phase change memory capable of increasing a resistance in a low resistance state is provided. The phase change memory includes a first electrode, a second electrode provided on the first electrode, and a phase change memory layer having a superlattice structure between the first elect...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: KINOSHITA MASAHARU, OYANAGI TAKASUMI, TAKAURA NORIKATSU, AKITA KENICHI, TAI MITSUHARU, KITAMURA MASAHITO, MORIKAWA TAKAHIRO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A superlattice phase change memory capable of increasing a resistance in a low resistance state is provided. The phase change memory includes a first electrode, a second electrode provided on the first electrode, and a phase change memory layer having a superlattice structure between the first electrode and the second electrode, the superlattice structure including to repeatedly formed layers of Sb2Te3 and GeTe. The phase change memory layer having the superlattice structure includes a Sb2Te3 layer containing Zr in contact with the first electrode.