Ultrathin body fully depleted silicon-on-insulator integrated circuits and methods for fabricating same

Integrated circuits and methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes providing an ultrathin body (UTB) fully depleted silicon-on-insulator (FDSOI) substrate. A PFET temporary gate structure and an NFET temporary g...

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Hauptverfasser:	ILLGEN RALF, FLACHOWSKY STEFAN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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