Ultrathin body fully depleted silicon-on-insulator integrated circuits and methods for fabricating same

Integrated circuits and methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes providing an ultrathin body (UTB) fully depleted silicon-on-insulator (FDSOI) substrate. A PFET temporary gate structure and an NFET temporary gate structure are formed on the substrate. The method implants ions to form lightly doped active areas around the gate structures. A diffusionless annealing process is performed on the active areas. Further, a compressive strain region is formed around the PFET gate structure and a tensile strain region is formed around the NFET gate structure.