Increased deposition efficiency and higher chamber conductance with source power increase in an inductively coupled plasma (ICP) chamber

Embodiments described herein generally relate to a substrate processing system and related methods, such as an etching/deposition method. The method comprises (A) depositing a protective layer on a first layer disposed on a substrate in an etch reactor, wherein a plasma source power of 4,500 Watts o...

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Bibliographische Detailangaben
Hauptverfasser:	SINGH SARAVJEET, YALAMANCHILI MADHAVA RAO, SIRAJUDDIN KHALID M, LIU TONG, SRIVASTAVA SONAL A, BAJAJ PUNEET, KUMAR AJAY, MISHRA ROHIT, DINEV JIVKO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DECORATIVE ARTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MOSAICS PAPERHANGING PERFORMING OPERATIONS PRODUCING DECORATIVE EFFECTS SEMICONDUCTOR DEVICES TARSIA WORK TRANSPORTING
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Beschreibung
Zusammenfassung:	Embodiments described herein generally relate to a substrate processing system and related methods, such as an etching/deposition method. The method comprises (A) depositing a protective layer on a first layer disposed on a substrate in an etch reactor, wherein a plasma source power of 4,500 Watts or greater is applied while depositing the protective layer, (B) etching the protective layer in the etch reactor, wherein the plasma source power of 4,500 Watts or greater is applied while etching the protective layer, and (C) etching the first layer in the etch reactor, wherein the plasma source power of 4,500 Watts or greater is applied while etching the first layer, wherein a time for the depositing a protective layer (A) comprises less than 30% of a total cycle time for the depositing a protective layer (A), the etching the protective layer (B), and the etching the first layer (C).