Edge-emitting semiconductor laser diode and method for producing the same

An edge-emitting semiconductor laser diode includes an epitactic semiconductor layer stack and a planarization layer. The semiconductor layer stack includes a main body and a ridge waveguide. The main body includes an active layer for generating electromagnetic radiation. The planarization layer emb...

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Bibliographische Detailangaben
Hauptverfasser:	RUMBOLZ CHRISTIAN, HARTAUER STEFAN, LELL ALFRED, NELZ CHRISTOPH
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	An edge-emitting semiconductor laser diode includes an epitactic semiconductor layer stack and a planarization layer. The semiconductor layer stack includes a main body and a ridge waveguide. The main body includes an active layer for generating electromagnetic radiation. The planarization layer embeds the ridge waveguide such that a surface of the ridge waveguide and a surface of the planarization layer form a flat main surface. A method for producing such a semiconductor laser diode is also disclosed.