Semiconductor device and methods of manufacturing

A semiconductor device includes polysilicon layer and a metal silicide layer. The polysilicon layer is doped with carbon or phosphorous. The silicide layer is formed over the polysilicon layer.

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Bibliographische Detailangaben
Hauptverfasser:	SHIEH JUNG-YU, LIN YUMIN, KO ZONG-JIE, LIAO JENG HWA, JHANG PEI-CI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	A semiconductor device includes polysilicon layer and a metal silicide layer. The polysilicon layer is doped with carbon or phosphorous. The silicide layer is formed over the polysilicon layer.