Design for test (DFT) read speed through transition detector in built-in self-test (BIST) sort

A memory operate in a normal mode of operation or a testing mode of operation. In the testing mode of operation, the memory can measure various benchmarks of performance, such as read speed. The memory can perform an asynchronous read operation to read a word of electronic data that corresponds to a...

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Bibliographische Detailangaben
Hauptverfasser: CH'NG SHEAU-YANG, ONG WEI-KENT, LAU SIE WEI HENRY, TEOH BOON-WENG, ONG MEEOO, BEH JIH HONG
Format: Patent
Sprache:eng
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Zusammenfassung:A memory operate in a normal mode of operation or a testing mode of operation. In the testing mode of operation, the memory can measure various benchmarks of performance, such as read speed. The memory can perform an asynchronous read operation to read a word of electronic data that corresponds to an address or a page read operation in which multiple asynchronous read operations are performed to read multiple words of electronic data, also referred to as a page of electronic data, that correspond to multiple addresses. The memory can measure a time required, referred to as read speed, to read the word of electronic data or the multiple words of electronic data from the memory. In the normal mode of operation, the memory can perform the asynchronous read operation, the page read operation, an asynchronous write operation in which a word of electronic data is stored into the memory that correspond to the address, or a page write operation in which a page electronic data is stored into the memory that correspond to the multiple addresses.