MOS transistor process
A MOS transistor process includes the following steps. A gate structure is formed on a substrate. A source/drain is formed in the substrate beside the gate structure. After the source/drain is formed, (1) at least a recess is formed in the substrate beside the gate structure. An epitaxial structure...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | A MOS transistor process includes the following steps. A gate structure is formed on a substrate. A source/drain is formed in the substrate beside the gate structure. After the source/drain is formed, (1) at least a recess is formed in the substrate beside the gate structure. An epitaxial structure is formed in the recess. (2) A cleaning process may be performed to clean the surface of the substrate beside the gate structure. An epitaxial structure is formed in the substrate beside the gate structure. |
|---|