Determining transistor leakage for an integrated circuit

Techniques are disclosed relating to determining power consumption of an integrated circuit. In one embodiment, an integrated circuit is disclosed that includes a power monitor unit configured to receive a temperature of the integrated circuit, and to determine an estimate of power consumed by transistor leakage of the integrated circuit based on the received temperature. In one embodiment, to determine the estimate, the power monitor unit is configured to multiply a base value and a scaling factor that is adjusted based on the received temperature. In some embodiments, the power monitor unit is configured to receive performance state information of the integrated circuit, and to determine an estimate of power consumed by transistor leakage of the integrated circuit based on the performance state information.